FJ4B01100L1
Panasonic Electronic Components
Panasonic Electronic Components
MOSFET P-CH 12V 2.2A XLGA004
$0.00
Available to order
Reference Price (USD)
1,000+
$0.20400
2,000+
$0.18600
5,000+
$0.17400
10,000+
$0.16800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the FJ4B01100L1 by Panasonic Electronic Components, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The FJ4B01100L1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Panasonic Electronic Components.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 74mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: XLGA004-W-0808-RA01
- Package / Case: 4-XFLGA, CSP
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