FJP3835TU
Fairchild Semiconductor
Fairchild Semiconductor
TRANS NPN 120V 8A TO220-3
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Optimize your electronic systems with the FJP3835TU Bipolar Junction Transistor (BJT) from Fairchild Semiconductor. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the FJP3835TU delivers superior performance in diverse environments. Fairchild Semiconductor's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 3A, 4V
- Power - Max: 50 W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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