FMBM5551-SB16001
onsemi
onsemi
TRANS NPN 160V 0.6A SSOT-6
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The FMBM5551-SB16001 BJT Array from onsemi brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The FMBM5551-SB16001 undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 700mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT™-6
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