FMMT555QTA
Diodes Incorporated
Diodes Incorporated
SS HI VOLTAGE TRANSISTOR SOT23 T
$0.15
Available to order
Reference Price (USD)
1+
$0.14984
500+
$0.1483416
1000+
$0.1468432
1500+
$0.1453448
2000+
$0.1438464
2500+
$0.142348
Exquisite packaging
Discount
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Upgrade your electronic designs with the FMMT555QTA Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the FMMT555QTA is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Diodes Incorporated for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 300mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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