FP10R12W1T7B11BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 10A 20MW EASY
$42.97
Available to order
Reference Price (USD)
1+
$36.09000
24+
$33.28583
120+
$28.42400
Exquisite packaging
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The FP10R12W1T7B11BOMA1 from Infineon Technologies exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the FP10R12W1T7B11BOMA1 in megawatt-level wind turbine converters. With Infineon Technologies's proven track record, the FP10R12W1T7B11BOMA1 represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 10 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
- Current - Collector Cutoff (Max): 4.5 µA
- Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 75°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
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