FP15R12W1T7B3BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE LOW POWER EASY
$44.32
Available to order
Reference Price (USD)
1+
$44.32000
500+
$43.8768
1000+
$43.4336
1500+
$42.9904
2000+
$42.5472
2500+
$42.104
Exquisite packaging
Discount
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The FP15R12W1T7B3BOMA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the FP15R12W1T7B3BOMA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every FP15R12W1T7B3BOMA1 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
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