FP50R12N2T7PBPSA1
Infineon Technologies
Infineon Technologies
1200 V, 50 A PIM IGBT MODULE
$144.92
Available to order
Reference Price (USD)
1+
$144.92000
500+
$143.4708
1000+
$142.0216
1500+
$140.5724
2000+
$139.1232
2500+
$137.674
Exquisite packaging
Discount
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Engineered for excellence, the FP50R12N2T7PBPSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FP50R12N2T7PBPSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FP50R12N2T7PBPSA1.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 25A
- Current - Collector Cutoff (Max): 4 µA
- Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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