FQA8N80C_F109
onsemi
onsemi
MOSFET N-CH 800V 8.4A TO3P
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the FQA8N80C_F109 by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the FQA8N80C_F109 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4.2A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 220W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
Renesas Electronics America Inc
RJK5013DPE-00#J3
Infineon Technologies
IRFR3711ZCTRPBF
Alpha & Omega Semiconductor Inc.
AOTF10N50FD_001
Harris Corporation
IRF121
onsemi
FQB19N10TM
Vishay Siliconix
IRF1405ZTRL
NXP USA Inc.
PSMN005-25D,118
Infineon Technologies
IRLIB9343
Alpha & Omega Semiconductor Inc.
AON6244_001
STMicroelectronics