FQB7N20LTM
onsemi
onsemi
MOSFET N-CH 200V 6.5A D2PAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FQB7N20LTM single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's FQB7N20LTM for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 750mOhm @ 3.25A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 63W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
IXYS
IXTH1N100
Infineon Technologies
IRLR3303TRL
onsemi
HUFA76609D3ST_F085
Taiwan Semiconductor Corporation
TSM1N45CT A3G
Infineon Technologies
IPD135N03LGXT
NXP USA Inc.
NX3008NBKT,115
onsemi
MCH6336-TL-W
Alpha & Omega Semiconductor Inc.
AOT2906
onsemi
CPH6444-TL-E
Infineon Technologies