FQB9N50CFTM_WS
onsemi
onsemi
MOSFET N-CH 500V 9A D2PAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the FQB9N50CFTM_WS single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FQB9N50CFTM_WS combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 173W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Diodes Incorporated
ZXMP10A18K
Vishay Siliconix
SI3805DV-T1-GE3
NXP USA Inc.
PHP75NQ08T,127
Vishay Siliconix
SUD06N10-225L-E3
Panasonic Electronic Components
MTM231100L
Infineon Technologies
IRF7342D2PBF
Infineon Technologies
IRF7807Z
IXYS
IXFN50N80Q2
Infineon Technologies
IRFR3418TRLPBF
Alpha & Omega Semiconductor Inc.