FQD3N50CTF
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 500V 2.5A DPAK
$0.31
Available to order
Reference Price (USD)
1+
$0.31000
500+
$0.3069
1000+
$0.3038
1500+
$0.3007
2000+
$0.2976
2500+
$0.2945
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the FQD3N50CTF by Fairchild Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the FQD3N50CTF is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SIHA22N60AE-GE3
Vishay Siliconix
SQJ420EP-T1_GE3
IXYS
IXFH180N20X3
Rohm Semiconductor
RW1E015RPT2R
Texas Instruments
CSD23382F4
Vishay Siliconix
SQJ170ELP-T1_GE3
Vishay Siliconix
IRFBE20PBF-BE3
Vishay Siliconix
SQ2364EES-T1_GE3
Infineon Technologies
IRFR4104TRRPBF
Renesas Electronics America Inc