FQD6N25TM
onsemi
onsemi
MOSFET N-CH 250V 4.4A DPAK
$0.85
Available to order
Reference Price (USD)
2,500+
$0.30195
5,000+
$0.28224
12,500+
$0.27238
25,000+
$0.26701
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FQD6N25TM single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's FQD6N25TM for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SQJ474EP-T2_GE3
STMicroelectronics
STW58N65DM2AG
Diodes Incorporated
DMN6075SQ-7
Vishay Siliconix
SQA413CEJW-T1_GE3
Nexperia USA Inc.
PMPB100ENEX
Nexperia USA Inc.
BUK9Y4R4-40E,115
STMicroelectronics
STFU9N65M2
Vishay Siliconix
SIHP21N65EF-GE3
onsemi
NVTFS5C658NLTAG
Diodes Incorporated