FQD7N20LTM
Fairchild Semiconductor

Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 5
$0.30
Available to order
Reference Price (USD)
2,500+
$0.33212
5,000+
$0.31043
12,500+
$0.29959
25,000+
$0.29368
Exquisite packaging
Discount
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The FQD7N20LTM single MOSFET from Fairchild Semiconductor is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the FQD7N20LTM is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 750mOhm @ 2.75A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63