FQI17P10TU
Fairchild Semiconductor
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
$0.51
Available to order
Reference Price (USD)
1+
$0.51000
500+
$0.5049
1000+
$0.4998
1500+
$0.4947
2000+
$0.4896
2500+
$0.4845
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FQI17P10TU from Fairchild Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FQI17P10TU offers the precision and reliability you need. Trust Fairchild Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 8.25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK (TO-262)
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Infineon Technologies
IPD100N06S403ATMA2
Infineon Technologies
IPP65R190CFDXKSA1
STMicroelectronics
STQ1HNK60R-AP
onsemi
NTMFS5C604NLT1G-UIL3
onsemi
FQP27N25
IXYS
IXTN660N04T4
Rohm Semiconductor
RCX160N20
onsemi
NTMFS1D7N03CGT1G
Vishay Siliconix
SQ2361AEES-T1_BE3
Alpha & Omega Semiconductor Inc.