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FQP19N10

onsemi
FQP19N10 Preview
onsemi
MOSFET N-CH 100V 19A TO220-3
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 9.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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