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FQP4N90C

onsemi
FQP4N90C Preview
onsemi
MOSFET N-CH 900V 4A TO220-3
$0.00
Available to order
Reference Price (USD)
1+
$1.85000
10+
$1.64100
100+
$1.29680
500+
$1.00570
1,000+
$0.79398
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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