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FQT4N20LTF

onsemi
FQT4N20LTF Preview
onsemi
MOSFET N-CH 200V 850MA SOT223-4
$0.64
Available to order
Reference Price (USD)
4,000+
$0.23529
8,000+
$0.22011
12,000+
$0.20493
28,000+
$0.19430
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.35Ohm @ 425mA, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-4
  • Package / Case: TO-261-4, TO-261AA

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