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FQU3P50TU

onsemi
FQU3P50TU Preview
onsemi
MOSFET P-CH 500V 2.1A IPAK
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Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

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