FS10R06VE3B2BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 600V 16A 50W
$21.82
Available to order
Reference Price (USD)
40+
$16.69450
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FS10R06VE3B2BOMA1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the FS10R06VE3B2BOMA1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the FS10R06VE3B2BOMA1 power module.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 16 A
- Power - Max: 50 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FF300R07KE4HOSA1
Infineon Technologies
F3L200R12W2H3PB11BPSA1
Infineon Technologies
FF1500R17IP5RBPSA1
Infineon Technologies
FF450R12KE4EHOSA1
Infineon Technologies
FD1200R17HP4KB2BOSA2
Infineon Technologies
F3L300R12MT4B23BOSA1
Infineon Technologies
FS950R08A6P2BBPSA1
Infineon Technologies
FF600R12ME4PB11BOSA1
STMicroelectronics
A1P35S12M3
Infineon Technologies