FS35R12KE3GBPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2B-311
$108.48
Available to order
Reference Price (USD)
1+
$108.48000
500+
$107.3952
1000+
$106.3104
1500+
$105.2256
2000+
$104.1408
2500+
$103.056
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FS35R12KE3GBPSA1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the FS35R12KE3GBPSA1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the FS35R12KE3GBPSA1 power module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 55 A
- Power - Max: 200 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
Related Products
Microchip Technology
APTGTQ200DA65T3G
IXYS
MIXA80R1200VA
IXYS
MII100-12A3
Microchip Technology
MSCGLQ200A65TG
Infineon Technologies
DF450R17N2E4PB11BPSA1
onsemi
FPF2G120BF07ASP
Microchip Technology
APTGT300DA60D3G
IXYS
MIXG450PF1700TSF
onsemi
NXH160T120L2Q2F2SG
Infineon Technologies