FS50R07N2E4B11BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 650V 70A 190W
$50.15
Available to order
Reference Price (USD)
1+
$50.15000
500+
$49.6485
1000+
$49.147
1500+
$48.6455
2000+
$48.144
2500+
$47.6425
Exquisite packaging
Discount
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Experience next-generation power control with Infineon Technologies's FS50R07N2E4B11BOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FS50R07N2E4B11BOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FS50R07N2E4B11BOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FS50R07N2E4B11BOSA1 IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Power - Max: 190 W
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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