FZ1200R17KF4CNOSA1
Infineon Technologies
Infineon Technologies
FZ1200R17 - INSULATED GATE BIPOL
$1,238.75
Available to order
Reference Price (USD)
1+
$1238.75000
500+
$1226.3625
1000+
$1213.975
1500+
$1201.5875
2000+
$1189.2
2500+
$1176.8125
Exquisite packaging
Discount
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Discover the FZ1200R17KF4CNOSA1 Bipolar Junction Transistor (BJT) from Infineon Technologies, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the FZ1200R17KF4CNOSA1 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Infineon Technologies for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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