FZ2400R12HE4B9HDSA2
Infineon Technologies
Infineon Technologies
IGBT MODULE
$874.21
Available to order
Reference Price (USD)
1+
$874.21000
500+
$865.4679
1000+
$856.7258
1500+
$847.9837
2000+
$839.2416
2500+
$830.4995
Exquisite packaging
Discount
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Infineon Technologies's FZ2400R12HE4B9HDSA2 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the FZ2400R12HE4B9HDSA2 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the FZ2400R12HE4B9HDSA2 power module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 3 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 3560 A
- Power - Max: 13500 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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