FZ2400R17KE3NOSA1
Infineon Technologies
Infineon Technologies
FZ2400R1 - INSULATED GATE BIPOLA
$928.32
Available to order
Reference Price (USD)
1+
$928.32000
500+
$919.0368
1000+
$909.7536
1500+
$900.4704
2000+
$891.1872
2500+
$881.904
Exquisite packaging
Discount
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The FZ2400R17KE3NOSA1 Bipolar Junction Transistor (BJT) by Infineon Technologies is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the FZ2400R17KE3NOSA1 provides consistent performance in demanding applications. Choose Infineon Technologies for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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