FZT857QTA
Diodes Incorporated
Diodes Incorporated
PWR HI VOLTAGE TRANSISTOR SOT223
$0.63
Available to order
Reference Price (USD)
1+
$0.63330
500+
$0.626967
1000+
$0.620634
1500+
$0.614301
2000+
$0.607968
2500+
$0.601635
Exquisite packaging
Discount
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Experience unmatched performance with the FZT857QTA Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the FZT857QTA delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Diodes Incorporated for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3.5 A
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 345mV @ 600mA, 3.5A
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
- Power - Max: 1.6 W
- Frequency - Transition: 80MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
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