G20N03D2
Goford Semiconductor
Goford Semiconductor
N30V,RD(MAX)<24M@10V,RD(MAX)<29M
$0.50
Available to order
Reference Price (USD)
1+
$0.50000
500+
$0.495
1000+
$0.49
1500+
$0.485
2000+
$0.48
2500+
$0.475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the G20N03D2 single MOSFET from Goford Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the G20N03D2 combines cutting-edge technology with Goford Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-DFN (2x2)
- Package / Case: 6-WDFN Exposed Pad
Related Products
Diodes Incorporated
DMTH3004LFG-7
Fairchild Semiconductor
FDC796N
Vishay Siliconix
SQD30N05-20L_T4GE3
Vishay Siliconix
SQJ142EP-T1_GE3
Renesas
RJJ0621DPP-E0#T2
UnitedSiC
UF3C170400K3S
Vishay Siliconix
IRFR420PBF-BE3
Infineon Technologies
IPS60R1K0CEAKMA1
onsemi
NDCTR30120A
Renesas Electronics America Inc