G2R120MT33J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH TO263-7
$114.52
Available to order
Reference Price (USD)
1+
$114.52000
500+
$113.3748
1000+
$112.2296
1500+
$111.0844
2000+
$109.9392
2500+
$108.794
Exquisite packaging
Discount
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The G2R120MT33J single MOSFET from GeneSiC Semiconductor is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the G2R120MT33J is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 3300 V
- Current - Continuous Drain (Id) @ 25°C: 35A
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 156mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3706 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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