G2SB80-E3/51
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 800V 1.5A GBL
$0.00
Available to order
Reference Price (USD)
1,200+
$0.52263
Exquisite packaging
Discount
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Optimize your power conversion systems with the G2SB80-E3/51 bridge rectifier diode from Vishay General Semiconductor - Diodes Division. This high-efficiency diode, part of the Diodes - Bridge Rectifiers subcategory, ensures minimal energy loss and maximum reliability. Ideal for use in telecommunications, medical devices, and automotive electronics, the G2SB80-E3/51 offers fast switching and low forward voltage. Vishay General Semiconductor - Diodes Division's dedication to innovation in Discrete Semiconductor Products means you get a component that outperforms the competition. Upgrade your designs with the G2SB80-E3/51 for unmatched performance.
Specifications
- Product Status: Obsolete
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800 V
- Current - Average Rectified (Io): 1.5 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
- Current - Reverse Leakage @ Vr: 50 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBL
- Supplier Device Package: GBL
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