G3R160MT12D
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 22A TO247-3
$6.91
Available to order
Reference Price (USD)
1+
$6.91000
500+
$6.8409
1000+
$6.7718
1500+
$6.7027
2000+
$6.6336
2500+
$6.5645
Exquisite packaging
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The G3R160MT12D from GeneSiC Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the G3R160MT12D offers the precision and reliability you need. Trust GeneSiC Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 123W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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