G3R160MT17D
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 21A TO247-3
$12.97
Available to order
Reference Price (USD)
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$12.97000
500+
$12.8403
1000+
$12.7106
1500+
$12.5809
2000+
$12.4512
2500+
$12.3215
Exquisite packaging
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Optimize your power electronics with the G3R160MT17D single MOSFET from GeneSiC Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the G3R160MT17D combines cutting-edge technology with GeneSiC Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
- Vgs(th) (Max) @ Id: 2.7V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 175W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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