G3R20MT12N
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 105A SOT227
$59.57
Available to order
Reference Price (USD)
1+
$59.57000
500+
$58.9743
1000+
$58.3786
1500+
$57.7829
2000+
$57.1872
2500+
$56.5915
Exquisite packaging
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The G3R20MT12N by GeneSiC Semiconductor is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose GeneSiC Semiconductor for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 365W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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