G3R20MT17K
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 124A TO247-4
$113.64
Available to order
Reference Price (USD)
1+
$113.64000
500+
$112.5036
1000+
$111.3672
1500+
$110.2308
2000+
$109.0944
2500+
$107.958
Exquisite packaging
Discount
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The G3R20MT17K by GeneSiC Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the G3R20MT17K is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
- Vgs(th) (Max) @ Id: 2.7V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 809W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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