G3R20MT17N
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 100A SOT227
$143.58
Available to order
Reference Price (USD)
1+
$143.58000
500+
$142.1442
1000+
$140.7084
1500+
$139.2726
2000+
$137.8368
2500+
$136.401
Exquisite packaging
Discount
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Upgrade your designs with the G3R20MT17N by GeneSiC Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the G3R20MT17N is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
- Vgs(th) (Max) @ Id: 2.7V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 523W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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