G3R30MT12K
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 90A TO247-4
$23.88
Available to order
Reference Price (USD)
1+
$23.88000
500+
$23.6412
1000+
$23.4024
1500+
$23.1636
2000+
$22.9248
2500+
$22.686
Exquisite packaging
Discount
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Upgrade your designs with the G3R30MT12K by GeneSiC Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the G3R30MT12K is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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