G3R350MT12D
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 11A TO247-3
$5.03
Available to order
Reference Price (USD)
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$5.03000
500+
$4.9797
1000+
$4.9294
1500+
$4.8791
2000+
$4.8288
2500+
$4.7785
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Discover the G3R350MT12D from GeneSiC Semiconductor, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the G3R350MT12D ensures reliable performance in demanding environments. Upgrade your circuit designs with GeneSiC Semiconductor's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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