G3R45MT17D
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 61A TO247-3
$34.69
Available to order
Reference Price (USD)
1+
$34.69000
500+
$34.3431
1000+
$33.9962
1500+
$33.6493
2000+
$33.3024
2500+
$32.9555
Exquisite packaging
Discount
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Upgrade your designs with the G3R45MT17D by GeneSiC Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the G3R45MT17D is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
- Vgs(th) (Max) @ Id: 2.7V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 438W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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