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G3R75MT12K

GeneSiC Semiconductor
G3R75MT12K Preview
GeneSiC Semiconductor
SIC MOSFET N-CH 41A TO247-4
$11.42
Available to order
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$11.3058
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$11.1916
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$11.0774
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$10.9632
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$10.849
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
  • Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
  • FET Feature: -
  • Power Dissipation (Max): 207W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4

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