G3S06506C
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
$4.34
Available to order
Reference Price (USD)
1+
$4.34000
500+
$4.2966
1000+
$4.2532
1500+
$4.2098
2000+
$4.1664
2500+
$4.123
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The G3S06506C single rectifier diode by Global Power Technology-GPT is a standout in the Diodes - Rectifiers - Single classification. Known for its robust construction and high rectification efficiency, it is perfect for demanding applications like electric vehicle charging stations and industrial robotics. Its low power dissipation and high thermal stability ensure optimal performance in data storage systems and server farms. The G3S06506C is also used in consumer gadgets, such as smartphones and tablets, highlighting its adaptability. Global Power Technology-GPT's G3S06506C is the ultimate solution for high-performance rectification needs.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 22.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 424pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Sanken
FMG-G2CS
Vishay General Semiconductor - Diodes Division
VS-40EPF04-M3
Rohm Semiconductor
RB501VM-40FHTE-17
Vishay General Semiconductor - Diodes Division
VS-15ETH06-1-M3
onsemi
1N5402RLG
NTE Electronics, Inc
NTE607
Vishay General Semiconductor - Diodes Division
LS4151GS08
Solid State Inc.
1N1403R
Fairchild Semiconductor
EGP30B
onsemi