G3S06508B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 3-PIN
$5.51
Available to order
Reference Price (USD)
1+
$5.51000
500+
$5.4549
1000+
$5.3998
1500+
$5.3447
2000+
$5.2896
2500+
$5.2345
Exquisite packaging
Discount
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Engineered for excellence, Global Power Technology-GPT's G3S06508B represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With Global Power Technology-GPT's proprietary screening processes, the G3S06508B guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 14A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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