G3S06508J
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
$6.70
Available to order
Reference Price (USD)
1+
$6.70000
500+
$6.633
1000+
$6.566
1500+
$6.499
2000+
$6.432
2500+
$6.365
Exquisite packaging
Discount
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The G3S06508J by Global Power Technology-GPT is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The G3S06508J is also used in smart home devices and wearable technology, ensuring seamless operation. Global Power Technology-GPT's expertise in semiconductor technology guarantees that the G3S06508J delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 23A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 550pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Isolated Tab
- Supplier Device Package: TO-220ISO
- Operating Temperature - Junction: -55°C ~ 175°C
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