G3S06512B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 12A 3-PI
$7.12
Available to order
Reference Price (USD)
1+
$7.12000
500+
$7.0488
1000+
$6.9776
1500+
$6.9064
2000+
$6.8352
2500+
$6.764
Exquisite packaging
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For engineers specializing in power electronics, the G3S06512B by Global Power Technology-GPT represents the pinnacle of rectifier diode array technology. Part of the essential Discrete Semiconductor Products lineup, this device features parallel diode configurations for increased current handling. Its applications span photovoltaic systems, UPS backups, and industrial automation controls. With Global Power Technology-GPT's patented junction design, the G3S06512B achieves superior heat dissipation and long-term stability under continuous load.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 27A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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