G3S06530A
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 30A 2-PI
$16.54
Available to order
Reference Price (USD)
1+
$16.54000
500+
$16.3746
1000+
$16.2092
1500+
$16.0438
2000+
$15.8784
2500+
$15.713
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The G3S06530A by Global Power Technology-GPT is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The G3S06530A is also used in smart home devices and wearable technology, ensuring seamless operation. Global Power Technology-GPT's expertise in semiconductor technology guarantees that the G3S06530A delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 110A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 2150pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Vishay General Semiconductor - Diodes Division
BYG23M-E3/TR
Panjit International Inc.
SD103AWS_R1_00001
Vishay General Semiconductor - Diodes Division
LL103B-GS18
Diotec Semiconductor
SM5400-CT
Microchip Technology
JAN1N6642UB/TR
Diodes Incorporated
SDT8A120P5-7
NXP USA Inc.
PMEG2005ESF315
Taiwan Semiconductor Corporation
BA159GH
NTE Electronics, Inc
NTE6065
Vishay General Semiconductor - Diodes Division