G3S06530P
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 30A 2-PI
$16.54
Available to order
Reference Price (USD)
1+
$16.54000
500+
$16.3746
1000+
$16.2092
1500+
$16.0438
2000+
$15.8784
2500+
$15.713
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with the G3S06530P single rectifier diode from Global Power Technology-GPT. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the G3S06530P delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Global Power Technology-GPT's G3S06530P is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 95A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 2150pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
onsemi
NRVUA220VT3G
Vishay General Semiconductor - Diodes Division
SS1P5LHM3/85A
Vishay General Semiconductor - Diodes Division
SE20DB-M3/I
Nexperia USA Inc.
BAS416F
Rohm Semiconductor
SCS310AMC
Microchip Technology
JANTXV1N4247
Central Semiconductor Corp
CMSH1-150HE TR13 PBFREE
Taiwan Semiconductor Corporation
TST30U45C
Micro Commercial Co
SK56AFL-TP
PN Junction Semiconductor