G3S06540B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 40A 3-PI
$32.69
Available to order
Reference Price (USD)
1+
$32.69000
500+
$32.3631
1000+
$32.0362
1500+
$31.7093
2000+
$31.3824
2500+
$31.0555
Exquisite packaging
Discount
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The G3S06540B from Global Power Technology-GPT sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Global Power Technology-GPT's rigorous quality control ensures the G3S06540B maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 60A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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