G3S06560B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A 3-PIN
$40.09
Available to order
Reference Price (USD)
1+
$40.09000
500+
$39.6891
1000+
$39.2882
1500+
$38.8873
2000+
$38.4864
2500+
$38.0855
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The G3S06560B from Global Power Technology-GPT sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Global Power Technology-GPT's rigorous quality control ensures the G3S06560B maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 95A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
Related Products
Sanken
FMX-4203S
Central Semiconductor Corp
CMPD2838 BK PBFREE
Nexperia USA Inc.
PMEG3002TV,115
Global Power Technology-GPT
G3S06510B
Central Semiconductor Corp
CMSD6001S TR PBFREE
Rohm Semiconductor
UMN10NTR
Power Integrations
LQA10T200C
onsemi
BAW56LT3
Vishay General Semiconductor - Diodes Division
VS-10CSH02HM3/87A
Toshiba Semiconductor and Storage