G3S12005A
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 5A 2-PI
$8.14
Available to order
Reference Price (USD)
1+
$8.14000
500+
$8.0586
1000+
$7.9772
1500+
$7.8958
2000+
$7.8144
2500+
$7.733
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize your device's efficiency with the G3S12005A single rectifier diode from Global Power Technology-GPT. This Discrete Semiconductor Product is crafted for precision, offering fast recovery times and high current handling. It is ideal for use in power supplies, motor controls, and lighting systems, where energy efficiency is crucial. The G3S12005A is also employed in agricultural machinery and marine electronics, proving its versatility across industries. Global Power Technology-GPT's G3S12005A is synonymous with reliability, making it a trusted choice for engineers worldwide.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 22A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 475pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Vishay General Semiconductor - Diodes Division
MBR1660-E3/45
Yangzhou Yangjie Electronic Technology Co.,Ltd
E1J-F1-0001HF
Panjit International Inc.
UF304G_R2_00001
Panjit International Inc.
MBR1080F_T0_00001
Toshiba Semiconductor and Storage
CUS05F30,H3F
Microchip Technology
MSC010SDA070B
onsemi
SS16T3G
Diotec Semiconductor
BY6
Central Semiconductor Corp
CMR1U-06FL TR13 PBFREE
GeneSiC Semiconductor