G3S12006B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 6A 3-PI
$10.42
Available to order
Reference Price (USD)
1+
$10.42000
500+
$10.3158
1000+
$10.2116
1500+
$10.1074
2000+
$10.0032
2500+
$9.899
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, Global Power Technology-GPT's G3S12006B represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With Global Power Technology-GPT's proprietary screening processes, the G3S12006B guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 14A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
Related Products
onsemi
MBRB3045CT-1G
Nexperia USA Inc.
BAT54XYH
IXYS
DSSK70-008AR
Vishay General Semiconductor - Diodes Division
VS-16CTQ100-1HM3
Taiwan Semiconductor Corporation
MBRS1545CT
Panjit International Inc.
BAS70C_R1_00001
GeneSiC Semiconductor
FST160100
Sanken
FML-4202S
Panjit International Inc.
BAT54AW-AU_R1_000A1
Panjit International Inc.