G3S12010A
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
$18.36
Available to order
Reference Price (USD)
1+
$18.36000
500+
$18.1764
1000+
$17.9928
1500+
$17.8092
2000+
$17.6256
2500+
$17.442
Exquisite packaging
Discount
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The G3S12010A single rectifier diode by Global Power Technology-GPT is a standout in the Diodes - Rectifiers - Single classification. Known for its robust construction and high rectification efficiency, it is perfect for demanding applications like electric vehicle charging stations and industrial robotics. Its low power dissipation and high thermal stability ensure optimal performance in data storage systems and server farms. The G3S12010A is also used in consumer gadgets, such as smartphones and tablets, highlighting its adaptability. Global Power Technology-GPT's G3S12010A is the ultimate solution for high-performance rectification needs.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 34.8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 770pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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