G3S12010D
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
$12.02
Available to order
Reference Price (USD)
1+
$12.02000
500+
$11.8998
1000+
$11.7796
1500+
$11.6594
2000+
$11.5392
2500+
$11.419
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The G3S12010D from Global Power Technology-GPT is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. Global Power Technology-GPT's dedication to quality means the G3S12010D meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 33.2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 765pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Panjit International Inc.
SB230_R2_00001
NTE Electronics, Inc
NTE5851
Vishay General Semiconductor - Diodes Division
V3F6-M3/H
Wolfspeed, Inc.
C4D10120A
GeneSiC Semiconductor
1N3889R
Vishay General Semiconductor - Diodes Division
V3PM10-M3/H
IXYS
DSEP12-12AZ-TUB
Vishay General Semiconductor - Diodes Division
ES1C-E3/61T
Taiwan Semiconductor Corporation
SS14H
onsemi