G3S12015H
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 15A 2-P
$22.08
Available to order
Reference Price (USD)
1+
$22.08000
500+
$21.8592
1000+
$21.6384
1500+
$21.4176
2000+
$21.1968
2500+
$20.976
Exquisite packaging
Discount
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Maximize your device's efficiency with the G3S12015H single rectifier diode from Global Power Technology-GPT. This Discrete Semiconductor Product is crafted for precision, offering fast recovery times and high current handling. It is ideal for use in power supplies, motor controls, and lighting systems, where energy efficiency is crucial. The G3S12015H is also employed in agricultural machinery and marine electronics, proving its versatility across industries. Global Power Technology-GPT's G3S12015H is synonymous with reliability, making it a trusted choice for engineers worldwide.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 21A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 1700pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Operating Temperature - Junction: -55°C ~ 175°C
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